Abstract
III-nitride semiconductor nanostructures, including gallium nitride (GaN) and their alloys with gallium (Al), indium (In), boron (B), antimony (Sb), and scandium (Sc), have emerged as one of the most promising material platforms for a broad range of applications, including deep ultraviolet (UV) optoelectronics, artificial photosynthesis, solar fuels, and quantum photonics. In this talk, I will present recent advances of their epitaxy/synthesis, electronic, optical, chemical, catalytic, and quantum properties, including the development of high efficiency deep UV LEDs, the demonstration of electrically pumped deep UV laser diodes, the first demonstration of ferroelectric switching in epitaxial nitride semiconductors, and the one-step conversion of carbon dioxide, sunlight and water to clean chemicals and fuels.

About the speaker:
Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. His teaching and research interests are in the areas of low dimensional semiconductors and their applications in electronic, photonic, clean energy, and quantum devices and systems. Prof. Mi has the David E. Liddle Research Excellence Award in 2021, the Young Scientist Award from the International Symposium on Compound Semiconductors in 2015, and the IEEE Photonics Society Distinguished Lecturer Award in 2020. Prof. Mi currently serves as the Editor-in-Chief of Progress in Quantum Electronics and Serial Editor of Semiconductors and Semimetals. Prof. Mi is a fellow of IEEE, SPIE and OSA.